J. Lee, W. Li, C.F. Zhang, S. Rebec, T. Jia, Y. Zhang, M. Hashimoto, D.H. Lu, R. G. Moore, and Z. X. Shen

Stanford University

Molecular beam epitaxy (MBE) is a growth technique which can provide pristine surface conditions that are crucial for angle resolved photoemission spectroscopy (ARPES). Furthermore, MBE is capable of fabricating systems which cannot be produced as bulk crystals, including heterostructures and ultrathin films. Studying the electronic structure of these exotic systems, e.g. using ARPES in-situ, holds an interest for both fundamental physics and applications. In this poster we discuss development of an MBE system at SSRL for growth of transition metal oxides, e.g. strontium titanante (STO), a class of materials exhibiting many unusual electronic properties. We demonstrate a combined in-situ ARPES/MBE study of iron selenide (FeSe) grown on STO. FeSe/STO provides a unique platform to study the electronic structure of an archetypal iron-based superconductor as well as interface effects that appear when going to the single unit cell limit.